Old Web
English
Sign In
Acemap
>
Paper
>
303 LSI配線中のCu/SiN界面付着強度に対する銅粒界局所変形の影響(OS3-1 MEMSと先進材料(1),OS3 MEMSと先進材料)
303 LSI配線中のCu/SiN界面付着強度に対する銅粒界局所変形の影響(OS3-1 MEMSと先進材料(1),OS3 MEMSと先進材料)
2014
makoto hanai
nobuyuki sisido
syouzi kamiya
takasi satou
yasuzou koiwa
masahiro nisida
masaki oomiya
kisi suzuki
yuuzi nakamura
tuyosi nokubi
tosiaki suzuki
Keywords:
Misorientation
Crystallography
Electron backscatter diffraction
Materials science
Metallurgy
adhesion strength
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]