Negative Capacitance Dual-Threshold Independent Gate FinFETs

In this paper, we introduce a negative capacitance independent gate FinFET (NC-IG-FinFET) devices, by stacking the ferroelectric material HfO2 into the front and back gate surfaces of the baseline independent gate FinFET (IG-FinFET) devices with symmetrical gate structure. We exhibit the dual-threshold characteristics of NC-IG-FinFETs by adjusting its gate work function, structural parameters, and ferroelectric material characteristics. The current characteristics of the NC-IG-FinFETs and baseline IG-FinFETs are simulated and verified by TCAD Silvaco. The results show that the proposed NC-IG-FinFETs have steeper subthreshold swing of 42mV/dec and larger switching current ratio than baseline IG-FinFETs. Therefore, the NC-IG-FinFETs offers significant advantages in terms of reduced power consumption.