Highly flexible titanium dioxide-based resistive switching memory with simple fabrication

We demonstrate a flexible resistive switching random access memory (ReRAM), which is a promising next-generation memory on a flexible substrate. The proposed method enables us to fabricate an Al/TiO2/Al structure on a polyimide substrate, which has highly flexible and durable characteristics, rather than a Si-based substrate by a simple fabrication process. To understand the role of oxygen vacancies in TiO2, our devices was analyzed by X-ray photoelectron spectroscopy (XPS) and XPS depth profile analyses. Moreover, severe bending of the device did not affect the memory performance owing to its small channel length and the high ductility of the electrode. The results presented here can provide a new approach to the fabrication of nonvolatile memories for flexible electronic devices.