Electrical Properties of Low-V T Metal-Gated n-MOSFETs Using La 2 O 3 /SiO x as Interfacial Layer Between HfLaO High-κ Dielectrics and Si Channel

In this letter, we report that by employing the La2O3/SiOx interfacial layer between HfLaO (La = 10%) high-κ and Si channel, the Ta2C metal-gated n-MOSFETs VT can be significantly reduced by ∼350 mV to 0.2 V, satisfying the low-VT device requirement. The resultant n-MOSFETs also exhibit an ultrathin equivalent oxide thickness (∼1.18 nm) with a low gate leakage (JG = 10 mA/cm 2 at 1.1 V), good drive performance (Ion = 900 µA/µ ma tIsoff = 70 nA/µm), and acceptable positive-bias-temperature-instability reliability. Index Terms—HfLaO, La2O3/SiOx interfacial layer (IL), low-VT n-MOSFETs, Ta2C.