Chemically amplified resist based on the methacrylate polymer with 2-trimethylsilyl-2-propyl ester protecting group

New silicon-containing polymers, poly{5-[(2- trimethylsilyl-2-propyl)oxycarbonyl]-norbornene-co-maleic anhydride} [poly(TMSPN-co-MA)] and poly{5- [(2-trimethylsilyl-2-propyl)oxycarbonyl]-norbornene-co- maleic anhydride-co-2-tri-methylsilyl-2-propyl methacrylate}, were synthesized for dually developable chemically amplified resists. The polymers exhibited relatively good transmittances at 193 nm and have good thermal stability up to 190 degrees Celsius. Poly(TMSPN-co-MA) was evaluated as a resist for ArF excimer laser lithography. 0.18 micrometer line and space patterns were obtained at a dose of 11 mJ/cm 2 using the conventional wet developer with an ArF excimer laser stepper. 1 micrometer line and space patterns were obtained using dry development process with O 2 reactive ion etching.