Method of forming a fuse structure for a semiconductor device

A method for forming a fuse structure of a semiconductor device is provided to improve reliability and productivity of the device by controlling a thickness of a fuse pattern by forming an etching stop film between a lower insulating film and an upper insulating film. A method for forming a fuse structure for a semiconductor device includes the steps of: forming a lower insulating film(110), an etching stop film(120), and an upper insulating film successively, on a substrate(100) having a cell region and a fuse region; forming an upper insulating film pattern having a first opening by patterning the upper insulating film of the fuse region using the etching stop film; and forming a conductive pattern for filling the first opening. The step of forming a conductive pattern includes the steps of: forming a conductive film on the resultant having the first opening; and forming a fuse pattern(157) with a plug structure burying the first opening, for exposing the upper side of the upper insulating film by planarizing the conductive film.