Correlation of optical and electrical properties of Be-doped GaInP grown by all-solid MBE

The optical and electrical properties of beryllium-doped GaInP grown by MBE have been investigated. An abnormal hole mobility of the material grown at low temperature was resulting from the two-dimensional holes accumulation at the GaInP/GaAs heterointerface. The optical properties of the materials were affected by the holes accumulation. Two photoluminescence (PL) peaks of the material with holes accumulation was observed. The PL decay characteristic was a double exponential curve and two radiative recombination mechanisms exist in the decay process. Different optical behaviors have shown that holes accumulation would result in the exciton localization effect at the GaInP/GaAs heterointerface.