Thin-film transistor realized with a combined active layer

A combined active layer thin-film transistor is reported. The effective channel length of this planar thin-film transistor is only 1.2μm, and no high resolution lithography technology is necessary for the fabrication processes. A discontinuous metal film is deposited on the semiconductor layer to form the combined active layer. The on-state current for a 3mm channel width is about 31mA, which is sufficient for most flat panel display devices.