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IIA-6 modulation-doped field-effect transistors utilizing superlattice AlGaAs/n + -GaAs charge-control layers
IIA-6 modulation-doped field-effect transistors utilizing superlattice AlGaAs/n + -GaAs charge-control layers
1986
David K. Arch
Jonathan K. Abrokwah
P.J. Vold
A. Fraasch
R.R. Daniels
N.C. Cirillo
M. S. Shur
J. Xu
Keywords:
Doping
Superlattice
Electronic engineering
Nuclear magnetic resonance
Modulation
Field-effect transistor
Charge control
Physics
Optoelectronics
Analytical chemistry
Correction
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