Changes in trap parameters in various mixed oxide garnets

Abstract Shallow and deep electronic traps in various mixed oxide garnet ceramics (Y,Lu,Gd) 3 (Al,Ga) 5 O 12 have been studied by thermally stimulated luminescence spectroscopy in the 80–550 K temperature range. It is shown that the substitution of Al ions by Ga and Y by Gd or Lu in YAG:Ce affects the properties of the traps. It is established that the studied ceramics contain residual impurities of chromium and ytterbium. On the base of the obtained and literature data, a table of the Cr-related trap position relative to the bottom of the conduction band in RE 3 (Ga x ,Al 5-x ) 5 O 12 :Ce garnets (RE = Lu, Y, Gd and combinations thereof) has been constructed.