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Atomistic Simulations of the Cold Source Field-Effect Transistor for Sub-60 mV/decade Switching
Atomistic Simulations of the Cold Source Field-Effect Transistor for Sub-60 mV/decade Switching
2020
Raphael Prentki
Mohammed Harb
Hong Guo
Keywords:
Optoelectronics
Materials science
Transistor
Source field
Correction
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