Flash memory subdivision for read-while-write operations

Flash memory device with a flash memory array (210-235; 305-320), a charge pump (280; 360, 365, 380) for providing voltage levels that are needed for reading, writing or erasing of the memory array, and sense amplifiers (270 ; 350) for amplifying to be written and read signals, characterized, that the flash memory array into a plurality of partitions (210-235; 305-320) is divided, so that can be written, read or deleted at a partition while simultaneously written in a different partition, read, or deleted, that the charge pump comprises a plurality of voltage outputs, each voltage output can output a voltage for reading, writing or erasing, and that is provided a plurality of sense amplifiers, said plurality comprising a first plurality of sense amplifiers that can perform a read operation at the same time in each case, and at least one other sense amplifier for each simultaneously executing an erase or write operation.