The effects of Cu-doped ZnTe intermediate layer on the Ohmic contact to CdZnTe films

Abstract Polycrystalline CdZnTe films with thickness about 300 μm were deposited by close spaced-sublimation (CSS) method. The as-deposited CdZnTe samples were polished by mechanical polishing (MP) process. Cu-doped ZnTe films were sputtered by RF magnetron sputtering as an intermediate layer to improve the performance of Ohmic contact of Au electrodes to CdZnTe films. The effect of Cu-doped ZnTe intermediate layers on the electrical characteristics of Au/CdZnTe and Au/ZnTe:Cu/CdZnTe was investigated by the circular transmission line model (CTLM). The results indicate a good Ohmic contact of Au/ZnTe:Cu/CdZnTe with low contact resistivity of about 0.79 Ω·cm 2 .