POST ILLUMINATION ANNEALING OF DEFECTS IN LASER-PROCESSED SILICON

Laser induced melting and resolidification of single crystal silicon introduces electrically active point defects. The electrical properties of laser processed silicon were monitored by capacitance transient spectroscopy (DLTS) and thermally stimulated capacitance (TSCAP) measurements. Removal of residual defects by thermal annealing occurs between 500°C and 700°C. More importantly, the defects are passivated by reaction with atomic hydrogen in the temperature range of 100–300°C.