An MOS transistor with Schottky source/drain contacts and a self-aligned low-resistance T-gate

Abstract A new design of metal-oxide-semiconductor field effect transistor is presented, where both the gate resistance and the source-drain resistance are greatly reduced compared to conventional designs. The device employs Schottky source/drain contacts and a T-shaped gate. Characteristics are measured of a 0.25 micron channel length silicon nMOS device with Ti/Ge/Si source and drain contacts and a Ti Al metal gate.