Embedded split-gate flash memory with silicon nanocrystals for 90nm and beyond

We present a split-gate based NOR flash memory array with silicon nanocrystals as the storage medium. 128 KB memory arrays have been evaluated with this technology and the results presented here show a nanocrystal memory that has been demonstrated to achieve a minimum 1.5 V operating window that is maintained through 10 K program/erase cycles; well controlled array threshold distributions; fast source-side injection programming (10-20 us); fast tunnel erase into the gate; and robust high temperature data retention for both uncycled and cycled arrays. Results presented here with focus on the array operation demonstrate the maturity of this technology for implementation into consumer, industrial, and automotive microcontrollers.