Photoluminescence CF Pb1−xSnxTe (x ∼ 0.2) crystals doped with Cd and In

It was found that by doping of Pb1−xSnxTe (0.16 ≲ x ≲ 0.22) crystals with Cd or In the photoluminescence,(PL) intensity is increased ∼ 5 and ∼ 20 times, respectively. The radiative transitions to deep impurity levels, the substantial (up to 5%) increasing of Eg and many (up to 8) spin-flip transitions in case of Cd are observed.