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TA-B8 back-illuminated InGaAs/InP p-i-n photodiodes prepared by molecular-beam epitaxy
TA-B8 back-illuminated InGaAs/InP p-i-n photodiodes prepared by molecular-beam epitaxy
1980
K. Y. Cheng
A.Y. Cho
T.P. Lee
C. A. Burrus
D.D. Manchon
Keywords:
Photodiode
Molecular beam epitaxy
Analytical chemistry
Physics
Optoelectronics
Correction
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