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A Comparative Study of Surface and Buried P-Channel 0.10um MOSFETs
A Comparative Study of Surface and Buried P-Channel 0.10um MOSFETs
2000
G. Guégan
S. Deleonibus
G. Bertrand
D. Souil
R. Clerc
S Tedesco
M. Heitzmann
Pierre Mur
Keywords:
Ion implantation
Leakage (electronics)
Materials science
Analytical chemistry
Electronic engineering
Boron
Doping
Negative-bias temperature instability
Threshold voltage
Short-channel effect
Communication channel
p channel
Lithography
Correction
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