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Electrical Characteristics of Gated-Anode Diode for Rectenna Using Normally-Off GaN HEMT
Electrical Characteristics of Gated-Anode Diode for Rectenna Using Normally-Off GaN HEMT
2020
Hidemasa Takahashi
Yuji Ando
Yoichi Tsuchiya
Akio Wakejima
Hiroaki Hayashi
Eiji Yagyu
Koichi Kikkawa
Naoki Sakai
Kenji Itoh
Jun Suda
Keywords:
Diode
normally off
High-electron-mobility transistor
Anode
Materials science
Rectenna
Optoelectronics
Correction
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