106 AND 1.3 UM Resonant Cavity-Enhanced Photodetectors Based on InGaAs Quantum Dots

I. L. Krestnikov,N.A. Maleev,M. V. Maximov,A. F. Tsatsul'nikov,A. E. Zhukov

106 AND 1.3 UM Resonant Cavity-Enhanced Photodetectors Based on InGaAs Quantum Dots

1999

I. L. Krestnikov
N.A. Maleev
M. V. Maximov
A. F. Tsatsul'nikov
A. E. Zhukov

Abstract : We have fabricated RCE photodetectors with AlAs/GaAs DBRs anci InGaAs QDs used as an active medium operating at 1.06 and 1.3 micrometer wavelengths.

Keywords:

Photodetector
Optoelectronics
Quantum dot
Materials science
Micrometer
active medium
Wavelength
resonant cavity

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