Effect of intensity and dose of implanted Mg ions on radiation-induced destructions in InSb

The method of backscattering and channeling of He ions with the 1.8 MeV energy has been used to investigate the effect of intensity and dose of implanted Mg ions on radiation-induced destructions in InSb. Determined is the dependence of the InSb lattice destruction extent on irradiation dose in the 5x10/sup 13/-10/sup 15/ cm/sup -2/ range and annealing temperature of 300-400 deg C, ion intensities being 0.5, 1.0, 1.5 ..mu..Ax cm/sup -2/. The defect distribution in depth (procceding from the He ion energy spectrum) scattered at the angle of 102 deg is plotted.