Reseach on structural design and preparation technology of InGaAsInP photocathodes

Based on the properties of InGaAs photocathode, the critical thickness of epitaxial layer is calculated, the structure of InGaAs/InP photocathode is designed, and the In0.53Ga0.47As/InP semiconductor material samples are epitaxially grown by MOCVD. We use the ultra-high vacuum preparation technology in cathode growth. After chemical cleaning, utilizing the GaAs photocathode multi-information measurement system which prepared by our laboratory, the InGaAs/InP photocathode samples are thermally purified at 650°C, 550°C and 400°C, respectively. Finally, the thermal purification results of InGaAs/InP photocathode materials are obtained through the surface analysis which carried out by XPS. At the same time, the spectral response curves at different thermal purification temperatures are given out. The research data will contribute to the further development of InGaAs/InP photocathode in the field of near-infrared low light level detection.