Low resistivity CdS thin films grown by flash‐evaporation at low substrate temperature (150–200 °C)

Undoped and In‐doped CdS films have been grown by flash‐evaporation at a substrate temperature between 150 and 200 °C. A resistivity of 5 Ω⋅cm has been obtained for undoped CdS films at 150 °C substrate temperature while a resistivity of about 2.5×10−3 Ω⋅cm could be obtained for 1% In‐doped CdS films at any substrate temperature between 150 and 200 °C. The transparency of such films for wavelengths larger than that of absorption edge is close to 100% when corrected for the reflection loss. Due to the above characteristics these films are suitable as windows in heterojunction solar cells.