Development of a dose-rate dosimeter for x-ray CT scanner using silicon x-ray diode

In an x-ray diagnosis, it is important to evaluate the entrance dose rate, as the dose rate of exposure becomes highest in that position. To investigate the effect of the entrance dose rate of x-ray CT scanners, a dose-rate dosimeter comprising a silicon x-ray diode (Si-XD), a CMOS dual operational amplifier, resistors, capacitors, and a mini-substrate measuring 20 × 17 mm2 were developed. The Si-XD is desirable for measuring the changing entrance dose rate, as it enables the reduction of the response time, dimensions, and cost of the dosimeter. The dosimeter was connected to a microcomputer (mbed), and the output voltages from the dosimeter were measured using an analog–digital converter in the mbed. The output voltages were proportional to the tube currents at a constant tube voltage of 100 kV using an industrial x-ray tube, and the calibrated dose rates corresponded well to those obtained using a commercially available semiconductor dosimeter. However, owing to the energy dependence of the dosimeter, the calibrated dose rate was ∼10% higher than that of a commercially available semiconductor dosimeter at the lower tube voltage. In the angular dependence of the dosimeter, the flatness measured from 60° to 120° was ∼103% in this study. A fundamental study for measuring the dose-rate variations with rotation was performed. The results showed a different profile than the angular dependence due to the distance from the source and the complex factors of the scattered radiation.