1T1C Ultra low power relative Thermal-Voltage sensor in 28nm UTBB FD-SOI CMOS technology for standard, spatial and quantum applications

The purpose of this study is to introduce preliminary results on a new relative thermal-voltage sensor within thin silicon film N-MOSFET device in 28 nm FD-SOI UTBB high-k metal gate technology. This evaluation is based on electro–thermal spice simulations with calibrated models. Experimental data validating our concept are also provided. It is highlighted that the design is functional with low power consumption (35 pW) and could be used for other technology node. This design solution is suitable for standard, spatial and quantum applications.