Remarkable interplay between strain and parasitic absorption unravelling the best route for Si-compatible Germanium laser at room temperature
2016
A dramatic and previously overlooked interaction of parasitic absorption with strain in germanium (Ge) is demonstrated through extensive simulations and experiments. Uniaxial strain of 4–5% and biaxial strain greater than 1% are the best candidates for a room temperature Ge laser.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
9
References
0
Citations
NaN
KQI