Characteristics of phase formation during GaSe oxidation

Abstract The method of phase-equilibrium diagrams was used to estimate the chemical composition of intrinsic oxides of GaSe. The most important prediction of the phase diagram constructed is that during GaSe oxidation the elemental constituents of the semiconductor, as in III–V and II–VI compounds, do not appear. Instead, another compound, with greater contents of such constituents precipitates at the GaSe-oxide interface. X-ray diffraction and luminescence experiments conducted on thermally oxidized GaSe verify this prediction well.