Phase-change memory device using block copolyme and manufacturing method for the same

PURPOSE: A phase-change memory device using a block copolymer and a manufacturing method thereof are provided to reduce a reset current in a device by reducing a contact area between an electrode layer and a phase-change layer. CONSTITUTION: A phase change memory device includes an electrode layer(120) and a phase change layer(140). The phase change layer touches the electrode layer. Phase change is generated according to heat generated from an electrode layer in a crystal form. A mask layer(160) is formed between the electrode layer and the phase change layer. The mask layer is patterned by selectively removing a part of a polymer block area self-assembled.