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10aAE-4 Ge濃度の異なるSbドープSiGe薄膜中の貫通転位運動(10aAE 格子欠陥(半導体・金属・転位),領域10(構造物性(誘電体,格子欠陥,X線・粒子線,フォノン)))
10aAE-4 Ge濃度の異なるSbドープSiGe薄膜中の貫通転位運動(10aAE 格子欠陥(半導体・金属・転位),領域10(構造物性(誘電体,格子欠陥,X線・粒子線,フォノン)))
2014
yosifumi yamasita
sinya maki
tatuya fusimi
hirosi oono
itirou yonenaga
kou nisikawa
yasuhiko hayasi
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