High-Linearity SiGe Power Amplifier for 2.4 GHz WLAN

A 2.4 GHz power amplifier for 802.11b/g application using 0.35 µm silicon germanium (SiGe) HBT technology has been demonstrated in this paper. With two-staged differential topology and linear bias circuitry, this power amplifier exhibits 24.2 dB gain and 26.2 dBm output power at 1-dB compression point (P1dB) with 43.1% power added efficiency (PAE). The second and third order inter-modulation distortion (IMD2/IMD3) products are less than-72dBc and - 40dBc at 3dB back-off from P1dB, respectively.