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Realization of 0.1 um Asymmetric Channel MOSFETs with Excellent Short-Channel Performance and Reliability
Realization of 0.1 um Asymmetric Channel MOSFETs with Excellent Short-Channel Performance and Reliability
1998
B. Cheng
V. Ramgopal Rao
B. Ikegami
Jason C. S. Woo
Keywords:
Electronic engineering
Materials science
Capacitance
Threshold voltage
Electrical engineering
Communication channel
mosfet circuits
Correction
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