Common Features of Epitaxial Growth on Vicinal GaAs(001), AlAs(001) and InAs(001) Surfaces

We have carried out RHEED measurements and Monte Carlo simulations of the growth on GaAs(001), AlAs(001) grown on GaAs(001), and InAs(001) to address the common features of the growth near the transition to step flow. For a fixed V/IIl ratio, the cation flux and misorientation-angle dependencies of the transition temperature on AlAs(001) and InAs(001) follow the same pattern as on GaAs(001). The same anisotropic behavior was also obtained, in that the transition temperature on a surface misoriented toward [110] is higher than that on a surface misoriented toward [110]. Unlike the case of GaAs(001), however, the surface reconstruction could not be kept constant near the growth mode transition for AlAs(001) and InAs(001). Therefore, we cannot compare simulations with experiments in as much detail as we have done for GaAs(001). Nevertheless, we can still estimate the effective surface migration barrier for Al adatoms on AlAs(001) as approximately 1.74eV and for In adatoms on InAs(001) as at most 1.23eV. This value should be compared with the value of 1.58eV obtained for GaAs(001).