Unusual X-Shaped Defects in the Silicon Single Crystal Subjected to Four-Point Bending

Dislocations in single-crystal silicon created by the four-point bending method are investigated using a laboratory X-ray source. Two- and three-dimensional diffraction images in the Laue geometry of unusual X‑shaped dislocation structures have been obtained for the first time. The spatial arrangement of such linear defects is analyzed and their geometric characteristics are quantitatively determined.