Photoluminescence of 2D-vertical In-rich APBs embedded in InGaP/SiGe/Si
2018
III-V/Si epitaxial nanostructure materials are quite promising candidates for the development of Si photonics. We deeply investigate the structural and optical properties of an InGaP/SiGe/Si platform by transmission electron microscopy, X-ray diffraction, energy-dispersive X-ray elemental mapping and photoluminescence techniques and we demonstrate the contribution of 2D-vertical In-rich antiphase boundaries (APBs) to the photoluminescence. The nonstoichiometric In-rich APB structures are found to be responsible for the localization of excitons.
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