Integration of selectively implanted collector (SIC) of SiGe:C HBT for optimised performance and manufacturability

An investigation of various selectively implanted collector (SIC) integration options for SiGe:C HBT devices is reported. SIC integration before and after SiGe:C base epi as well as the size and concentration of the SIC region are evaluated. Tradeoffs between device performance and manufacturability for various SIC integration options are discussed.