P-11: a-Si TFT Model in H-Spice Simulation Fitted to the Dynamic Operation

The measurement of pixel voltage, which is impossible by a direct probing method, is carried out by the indirect method which utilizes the voltage-luminance characteristics of real panel. New a-Si TFT model, which is different from DC measurement but includes dynamic behavior of a-Si TFT, predicts visual characteristics of real panel with more accuracy.