Capacitance, conductance, and dielectric characteristics of Al/TiO 2 /Si diode

In this study, electrical properties of the Al/TiO2/p-Si diode structure with an atomic layer deposited TiO2 interface layer are investigated by current–voltage ( $$I-V$$ ), capacitance–voltage ( $$C-V$$ ), and conductance–voltage ( $$G-V$$ ) measurements. It shows a rectifying behavior with about four order of rectification factor, and barrier height and ideality factor are calculated from the rectification curve. Dielectric parameters are determined from frequency-dependent $$C-V$$ and $$G-V$$ relations. The experimental results show that both of these curves are in a strong response to the frequency and bias voltage. They are found in decreasing behavior with increasing frequency, and both of them increase with increase in bias voltage although there are different increasing trends. At reversed bias voltage region, barrier potential, Fermi level energy, and interface charge carrier contribution are evaluated by using $$1/{C}^{-2}-V$$ plot. Series resistance values are also calculated under the variation of frequency and voltage. Thus, the capacitive characteristics of the diode are corrected by eliminating series resistance contribution together with the possible effect on interface charge carriers. Detailed information is obtained by determining electronic parameters affected by interface states over a wide frequency range (1 kHz to 1 MHz). At this point, strong response to the frequency is observed for the dielectric constant. Under the effect of interfacial polarization at low-frequency region, interface charge contribution to the capacitive response of the diode is obtained. Further analysis is performed on electrical modulus and impedance values derived from experimental dielectric data. Existence of interfacial layer capacitance is detailed by extracting distribution of interface charges from capacitance and conductance profiles of the diode under the effect of frequency.