Leakage currents through In/MgO/n-type Si/In structures

Abstract Leakage currents through In/MgO/n-type Si/In structures were studied. The electrical conduction investigations suggest that the leakage behavior is governed by the Schottky (Poole–Frenkel) emission for the gate (substrate) injection. This is because of strong leakage current dependent on the interfacial property of devices. It is shown that the discrepancy in the MgO permittivity extracted from the Schottky and Poole–Frenkel emissions is due to the formation of intermediate MgSi x O y layer.