Noise parameters of SiGe HBTs in mmW range: towards a full in situ measurement extraction

In this paper, an in-situ extraction of the four noise parameters (NF min , R n , Γ opt ) of SiGe HBTs in mmW range (D-Band, 130–170 GHz) is described. Because an external mechanical tuner features high losses in such frequency mmW range, the first idea was to integrate an in-situ tuner directly on the silicon wafer. The concept was then extended in order to integrate more elements on silicon.