A low temperature polysilicon thin film transistor and a manufacturing method of unit

The present invention provides a manufacturing method for a liquid crystal display module LTPS transistor cells and of the manufacturing method comprising: forming the SiNx layer on a glass substrate; sequentially formed SiOx layer and an a-Si layer on the SiNx layer ; laser scanning a-Si layer, a-Si layer to remove the hydrogen; a-Si layer crystallized using excimer laser annealing to form a polycrystalline silicon layer; forming a gate insulating layer on the polysilicon layer; a gate insulating layer forming a gate on; drain electrode formed on the gate insulating layer. The manufacturing method using a low energy laser is removed by scanning the substrate in a-Si layer of hydrogen, in place of conventional high temperature thermal curing type dehydrotestosterone, so the content of the buffer layer can ensure the SiNx layer H is not affected, in addition to the subsequent step polysilicon layer is hydrotreated, H and H of the drain in the insulating layer in the SiNx layer simultaneously as a complement of a hydrogen source hydrogen buffer layer, a polysilicon layer which makes the process more complete complement of hydrogen, a hydrogen make better, improve the electrical performance of the TFT.