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Improved 70 nm In 0.52 AlAs/In 0.65 GaAs High Electron Mobility Transistor with Additional Ohmic Contacts
Improved 70 nm In 0.52 AlAs/In 0.65 GaAs High Electron Mobility Transistor with Additional Ohmic Contacts
2008
Seong-Jin Yeon
Jong Wook Kim
Seong Won Lee
Myung Hwan Park
Kwang-Seok Seo
Keywords:
Atomic physics
Nanotechnology
Ohmic contact
High-electron-mobility transistor
Materials science
Optoelectronics
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