Dendritic cast method

Abstract Motivation to develop the dendritic cast method is explained at first. Growth and behavior of dendrite crystals using the in-situ observation system is explained in the basis of the growth mechanisms of dendrite crystals. For growth of Si multicrystalline, control of dendrite crystals grown along the bottom of a crucible, control of arrangement of dendrite crystals, effect of angle between dendrite crystals and generation of dislocations are basically explained. Especially, quality and solar-cell performance of Si ingots are quite important to know the real value or role of the dendritic cast method as the structure control method to give a significant impact on the development of seed-assisted ingot-growth technologies. The solar-cell performance of Si large multicrystalline ingots are also shown together with the development of the pilot furnace for manufacturing industrial scale ingots. The improvement points and key points are shown for the dendritic cast method.