Multiferroic/piezoelectric composite structure, storage device and preparation method thereof

Disclosed is a multiferroic/piezoelectric composite structure, comprising a substrate; a bottom electrode layer formed by conductive oxides and located on the substrate; and laminations formed by alternatively stacked multiferroic thin film layers and piezoelectric layers located on the bottom electrode layer; wherein multiferroic thin film layers and adjacent piezoelectric layers are in contact to form sandwich structures. The multiferroic / piezoelectric composite structure utilizes piezoelectric layers and a multiferroic thin film layer similar structure formed by low temperature multiferroic materials to form interfacial effect and exchange coupling, furthermore improves multiferroic thin film performs under low temperature environments such as the south pole and space exploration, substantially improves multiferroic material (such as YMnO3) application in ferroelectric storage, and thereby meets people demands on hard disk rapid write-in and read-out, computer nonvolatile storage and device miniaturization and multifunction under low temperature environments.