Microplasmas avalanche breakdown as a diagnostic tool and reliability appreciating of the INGAN/GAN high-power LEDs

Microplasmas breakdown of the InGaN/GaN heterostructures of different types of high-power light-emitting diodes is studied. It is shown that microplasma parameters, connected with reliability and such fabricating technology of the InGaN/GaN heterostructures as substrate material - Al 2 O 3 , SiC or Si, which determines the density of the critical extended defects, light flux, homogeneity of current spreading.