Strain engineered pHEMTs on virtual substrates: a Monte Carlo simulation study

Abstract Monte Carlo simulations are used to investigate the influence of various strain conditions on the performance of pseudomorphic High Electron Mobility Transistors (pHEMTs) with low In content In x Ga 1- x As channels ( x x Al 1- x As buffers to control the type and magnitude of strain induced in the channel. It is shown that devices with relaxed (lattice matched) and tensile strained channels provide better RF performance compared with conventional compressively strained pHEMTs on standard GaAs substrates. It is argued that strain engineering in GaAs based devices with low In content in the channel makes it possible to achieve RF performance comparable to that of InP based pHEMTs, whilst improving device breakdown characteristics and avoiding the fabrication problems associated with fragile InP substrates.