40 mW, 100/spl deg/C maximum temperature operation of 655-nm band InGaP/InGaAlP strained multiple-quantum-well laser diodes

High-power and high-temperature operation of 40 mW at 100/spl deg/C has been realized in 655-nm band multiple-quantum-well (MQW) laser diodes. Both low threshold current density and low optical power density have been achieved by optimizing InGaP-InGaAlP strained MQW separate-confinement heterostructure, high doping for acceptors in p-cladding layer and adopting low-optical-loss high-reflectivity-coating at the rear facet. Fundamental-transverse-mode operation, up to 70 mW, was obtained. High-frequency and large-intensity modulation characteristics above 1 GHz were demonstrated. The relative intensity noise values were as low as -135 dB/Hz under an optical feedback with high-frequency modulation. Stable operation of 30 mW at 70/spl deg/C over 1000 h was accomplished.