Croissance de cristaux de SiC à partir d'un alliage liquide Al-Si saturé en carbone

Growth of cubic P-Sic crystals from a C-saturated Al-Si melt under atmospheric pressure has been investigated at temperatures ranging from 700 to 120OoC and for silicon contents in the melt varying from 12.5 to 40 at%. Under favourable conditions (1 100°C, 30 at%Si), crystals with (1 11) faces up to 100pm wide have been produced. Thermo-kinetic considerations based on an optimum deviation to the A14C3-Sic-L monovariant equilibrium in the Al-C-Si ternary system are proposed for modelling the experimental results.