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Precise etching of AlGaN/GaN HEMT structures with Cl 2 /BCL 3 /Ar plasma
Precise etching of AlGaN/GaN HEMT structures with Cl 2 /BCL 3 /Ar plasma
2014
J. Gryglewicz
R. Paszkiewicz
W. Macherzyński
Andrzej Stafiniak
Mateusz Wośko
Keywords:
Analytical chemistry
Plasma
Physics
Etching
Reactive-ion etching
High-electron-mobility transistor
Optoelectronics
algan gan
Correction
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