GaN Schottky barrier photodetectors with SiN∕GaN nucleation layer

GaN Schottky barrier photodetectors with SiN∕GaN nucleation layer were fabricated. It was found that leakage current was much smaller and much less bias dependent for the photodetector with SiN∕GaN nucleation layer, as compared to the photodetector with conventional low-temperature GaN nucleation layer. It was also found that effective Schottky barrier height increased from 1.27to1.53eV with the insertion of the SiN layer. Furthermore, it was found that the authors can effectively suppress internal gain of the detector and enhance ultraviolet to visible rejection ratio by using the SiN∕GaN nucleation layer.